INVESTIGATION OF WAVELENGTH GaInNAs 1300-1550 nm STRAINED QUANTUM WELLS ON GaAs SUBSTRATES
نویسندگان
چکیده
In this paper the band structures of GaxIn1-xNyAs1-y/GaAs strained quantum wells are investigated using 4x4 k.p Hamiltonian including the heavy hole, light hole and spin-orbit splitting bands. The III–V-nitride semiconductor alloys, GaxIn1-xNyAs1-y, operating at optical fibre telecommunications wavelengths around 1.3 μm, attract an increasing amount of attention in the last couple of years not only due to its promising application but also due to its unusual optical and physical properties. By changing the well width, x composition and nitrogen composition (y), the effects of quantum confinement and compressive strain are examined. We also studied the influence of the incorporation of nitrogen (y) and antimony (Sb) in our structure.
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